The higher-k phase formation in amorphous HfO2 films by swift heavy ion irradiation

被引：3

作者：

Li, Zongzhen ^{[1
]}

Liu, Jie ^{[1
]}

Zhai, Pengfei ^{[1
]}

Liu, Li ^{[1
,2
]}

Xu, Lijun ^{[1
]}

Zhang, Shengxia ^{[1
]}

Hu, Peipei ^{[1
]}

Zeng, Jian ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China

[2] Univ Chinese Acad Sci, Sch Nucl Sci & Technol, Beijing 100049, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2022年 / 585卷

基金：

中国国家自然科学基金;

关键词：

Heavy ion irradiation; Crystallization; Higher-k phase; HfO2; THIN-FILMS; THERMAL-STABILITY; IMPACT; HAFNIA; SI;

D O I：

10.1016/j.jcrysgro.2022.126600

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The formation of higher-k phase HfO2 is challenging and attractive. In this study, the phase transition of pure HfO2 thin films was induced by swift heavy ions (SHIs) irradiation. The amorphous HfO2 films crystallized after SHIs irradiation and undergone a transformation of monoclinic to cubic/tetragonal phase with the increase of the ion fluences. The as-deposited HfO2 films take on nonstoichiometric state, and became close to the stoichiometric one under SHIs irradiation. This work provides an approach to stabilize the higher-k phase HfO2 and optimize the interface between HfO2 and Si by SHIs irradiation.

引用

页数：5

共 50 条

[1] Opportunity for Phase-controlled Higher-k HfO2
Toriumi, Akira
Nakajima, Yasuhiro
Kita, Koji
[J]. ULSI PROCESS INTEGRATION 7, 2011, 41 (07): : 125 - 136
[2] High-k, Higher-k and Ferroelectric HfO2
Toriumi, Akira
[J]. SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR, 2017, 80 (01): : 29 - 40
[3] Experimental Demonstration of Higher-k Phase HfO2 through Non-equilibrium Thermal
Nakajima, Yasuhiro
Kita, Koji
Nishimura, Tomonori
Nagashio, Kosuke
Toriumi, Akira
[J]. DIELECTRICS FOR NANOSYSTEMS 4: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING, 2010, 28 (02): : 203 - 212
[4] Phase control of HfO2-based dielectric films for higher-k materials
Lee, Jae Ho
Yu, Il-Hyuk
Lee, Sang Young
Hwang, Cheol Seong
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2014, 32 (03):
[5] Heavy Ion Irradiation Effects on Structural and Ferroelectric Properties of HfO2 Films
Kaempfe, T.
Vogel, T.
Olivo, R.
Lederer, M.
Kaiser, N.
Petzold, S.
Ali, T.
Lehninger, D.
Trautmann, C.
Alff, L.
Seidel, K.
[J]. 2020 JOINT CONFERENCE OF THE IEEE INTERNATIONAL FREQUENCY CONTROL SYMPOSIUM AND INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS (IFCS-ISAF), 2020,
[6] The effect of HfO2 second phase in Fe films upon ion irradiation
Zhang N.
Li Z.-C.
Zhang Z.-J.
[J]. Frontiers of Materials Science in China, 2010, 4 (2): : 193 - 196
[7] Fluence and ion dependence of amorphous iron-phase-formation due to swift heavy ion irradiation in electrodeposited iron thin films
Stichleutner, S.
Kuzmann, E.
Havancsak, K.
Huhn, A.
El-Sharif, M. R.
Chisholm, C. U.
Doyle, O.
Skuratov, V.
Homonnay, Z.
Vertes, A.
[J]. RADIATION PHYSICS AND CHEMISTRY, 2011, 80 (03) : 471 - 474
[8] Swift heavy ion irradiation of amorphous silicon
Hedler, A
Klaumünzer, S
Wesch, W
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2006, 242 (1-2): : 85 - 87
[9] Amorphous iron phase formation in swift heavy ion irradiated electrodeposited iron thin films
Kuzmann, E.
Stichleutner, S.
Havancsak, K.
El-Sharif, M. R.
Chisholm, C. U.
Doyle, O.
Skuratov, V.
Kellner, K.
Dora, Gy.
Homonnay, Z.
Vertes, A.
[J]. RADIATION PHYSICS AND CHEMISTRY, 2006, 75 (07) : 741 - 746
[10] Low temperature formation of higher-k cubic phase HfO2 by atomic layer deposition on GeOx/Ge structures fabricated by in-situ thermal oxidation
Zhang, R.
Huang, P. -C.
Taoka, N.
Yokoyama, M.
Takenaka, M.
Takagi, S.
[J]. APPLIED PHYSICS LETTERS, 2016, 108 (05)

← 1 2 3 4 5 →