Heavy Ion Irradiation Effects on Structural and Ferroelectric Properties of HfO2 Films

被引：0
|
作者：
Kaempfe, T. [1 ]
Vogel, T. [2 ]
Olivo, R. [1 ]
Lederer, M. [1 ]
Kaiser, N. [2 ]
Petzold, S. [2 ]
Ali, T. [1 ]
Lehninger, D. [1 ]
Trautmann, C. [2 ,3 ]
Alff, L. [2 ]
Seidel, K. [1 ]
机构：
[1] Ctr Nanoelect Technol CNT, Fraunhofer IPMS, Konigsbrucker Str 178, D-01099 Dresden, Germany
[2] Tech Univ Darmstadt, Inst Mat Sci, Alarich Weiss Str 2, D-64287 Darmstadt, Germany
[3] GSI Helmholtzzentrum Schwerionenforsch, Mat Res Dept, Planckstr 1, D-64291 Darmstadt, Germany
来源：
2020 JOINT CONFERENCE OF THE IEEE INTERNATIONAL FREQUENCY CONTROL SYMPOSIUM AND INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS (IFCS-ISAF) | 2020年
关键词：
Hafnium oxide; ferroelectrics; high-k; radiation hardness; heavy ion irradiation;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The novel thin-film ferroelectric material hafnium oxide has revived the interest into ferroelectric memory concepts, which is due to the fact, that it facilitates CMOS and BEoL compatible integration. A major requirement hereby is the stability of the ferroelectric layer towards ionizing radiation, such as gamma and heavy ion exposure. In this study, we investigate for the first time the influence of heavy ion irradiation on the crystallographic and ferroelectric properties of hafnium oxide based thin films. We show, that up to fluences of 10(10) ions /cm(2) of Au26+ ions with an energy of 1.635 GeV both the crystallographic and ferroelectric properties of Si:HfO2 (HSO) and Hf0.5Zr0.5O2 (HZO) keep unchanged. For higher dosages, a soft affection can be observed, which is retrieved to be a result of irradiation supported phase transition. The results of this study will help to implement ferroelectric memories into aviation and space applications.
引用
收藏
页数：3
相关论文
共 50 条
  • [1] Effects of substrate temperature on properties of HfO2, HfO2:Al and HfO2:W films
    Lin, Su-Shia
    Liao, Chung-Sheng
    Fan, Sheng-You
    [J]. SURFACE & COATINGS TECHNOLOGY, 2015, 271 : 269 - 275
  • [2] MeV-Si ion irradiation effects on the electrical properties of HfO2 thin films on Si
    Yu, Xiangkun
    Shao, Lin
    Chen, Q. Y.
    Trombetta, L.
    Wang, Chunyu
    Dharmaiahgari, Bhanu
    Wang, Xuemei
    Chen, Hui
    Ma, K. B.
    Liu, Jiarui
    Chu, Wei-Kan
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2006, 249 : 414 - 416
  • [3] Effects of heavy-ion irradiation on the electrical properties of rf-sputtered HfO2 thin films for advanced CMOS devices
    Singh, Vikram
    Shashank, N.
    Kumar, Dinesh
    Nahar, R. K.
    [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2012, 167 (03): : 204 - 211
  • [4] Epitaxial Ferroelectric HfO2 Films: Growth, Properties, and Devices
    Fina, Ignasi
    Sanchez, Florencio
    [J]. ACS APPLIED ELECTRONIC MATERIALS, 2021, 3 (04) : 1530 - 1549
  • [5] Optimization of Ferroelectric Properties of HfO2-Based Thin Films by Ion Irradiation
    Liao, Ningtao
    Lin, Xin
    Zhu, Bingyan
    Zhong, Xiangli
    Jiang, Limei
    Ouyang, Xiaoping
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2024, 71 (05) : 1208 - 1217
  • [6] The higher-k phase formation in amorphous HfO2 films by swift heavy ion irradiation
    Li, Zongzhen
    Liu, Jie
    Zhai, Pengfei
    Liu, Li
    Xu, Lijun
    Zhang, Shengxia
    Hu, Peipei
    Zeng, Jian
    [J]. JOURNAL OF CRYSTAL GROWTH, 2022, 585
  • [7] Structural and ferroelectric properties of Pr doped HfO2 thin films fabricated by chemical solution method
    Liu, Heng
    Zheng, Shuaizhi
    Chen, Qiang
    Zeng, Binjian
    Jiang, Jie
    Peng, Qiangxiang
    Liao, Min
    Zhou, Yichun
    [J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2019, 30 (06) : 5771 - 5779
  • [8] Structural and ferroelectric properties of Pr doped HfO2 thin films fabricated by chemical solution method
    Heng Liu
    Shuaizhi Zheng
    Qiang Chen
    Binjian Zeng
    Jie Jiang
    Qiangxiang Peng
    Min Liao
    Yichun Zhou
    [J]. Journal of Materials Science: Materials in Electronics, 2019, 30 : 5771 - 5779
  • [9] Effects of substrate temperature on the structural, optical and resistive switching properties of HfO2 films
    Du, Qianqian
    Wang, Wenjun
    Li, Shuhong
    Zhang, Dong
    Zheng, Wanquan
    [J]. THIN SOLID FILMS, 2016, 608 : 21 - 25
  • [10] The effect of HfO2 second phase in Fe films upon ion irradiation
    Zhang N.
    Li Z.-C.
    Zhang Z.-J.
    [J]. Frontiers of Materials Science in China, 2010, 4 (2): : 193 - 196
12345