Thermal Expansion of HfO2 and ZrO2

被引:106
|
作者
Haggerty, Ryan P. [1 ]
Sarin, Pankaj [1 ]
Apostolov, Zlatomir D. [1 ]
Driemeyer, Patrick E. [1 ]
Kriven, Waltraud M. [1 ]
机构
[1] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA
基金
美国国家科学基金会;
关键词
HIGH-TEMPERATURE; CRYSTAL-STRUCTURE; IN-SITU; HAFNIA; DIFFRACTION; REFINEMENT; SYSTEM;
D O I
10.1111/jace.12975
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The thermal expansion of a low symmetry crystal can be much more interesting than the lattice parameter expansion would suggest. Here, the complete thermal expansion tensors for monoclinic and tetragonal phases of ZrO2 and HfO2 have been measured in air, by high-resolution, high-temperature X-ray diffraction. These results reveal the highly anisotropic nature of thermal expansion in the monoclinic phase as well as a cooperative movement of ions and the existence of a zero thermal expansion plane.
引用
收藏
页码:2213 / 2222
页数:10
相关论文
共 50 条
  • [1] AXIAL AND LINEAR THERMAL-EXPANSION OF ZRO2 AND HFO2
    RUH, R
    HOLLENBERG, GW
    SKAGGS, SR
    STODDARD, SD
    GAC, FD
    CHARLES, EG
    [J]. AMERICAN CERAMIC SOCIETY BULLETIN, 1981, 60 (04): : 504 - 506
  • [2] Electronic structure of ZrO2 and HfO2
    Perevalov, TV
    Shaposhnikov, AV
    Nasyrov, KA
    Gritsenko, DV
    Gritsenko, VA
    Tapilin, VM
    [J]. DEFECTS IN HIGH-K GATE DIELECTRIC STACKS: NANO-ELECTRONIC SEMICONDUCTOR DEVICES, 2006, 220 : 423 - +
  • [3] ON THE DEFECT STRUCTURE OF ZRO2 AND HFO2
    KOFSTAD, P
    RUZICKA, DJ
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (03) : 181 - 184
  • [4] ON THE DEFECT STRUCTURE OF ZRO2 AND HFO2
    HARROP, PJ
    WANKLYN, JN
    KOFSTAD, P
    RUZICKA, DJ
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (12) : 1285 - 1286
  • [5] AXIAL THERMAL EXPANSION OF ZRO2 AND HFO2 IN RANGE ROOM TEMPERATURE TO 1400 DEGREES C
    PATIL, RN
    SUBBARAO, EC
    [J]. JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1969, 2 : 281 - +
  • [6] THE CRYSTAL STRUCTURE OF ZRO2 AND HFO2
    ADAM, J
    ROGERS, MD
    [J]. ACTA CRYSTALLOGRAPHICA, 1959, 12 (11): : 951 - 951
  • [7] PROPERTIES OF ZRO2 AND HFO2 FILMS OBTAINED BY REACTIVE THERMAL EVAPORATION
    TCHELIEBOU, F
    BOYER, A
    CHERON, JP
    [J]. JOURNAL DE PHYSIQUE IV, 1993, 3 (C7): : 1003 - 1006
  • [8] Difference in thermal degradation behavior of ZrO2 and HfO2 anodized capacitors
    Kamijyo, M
    Onozuka, T
    Yoshida, N
    Shinkai, S
    Sasaki, K
    Yamane, M
    Abe, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (9A): : 6217 - 6220
  • [9] ANOMALOUS THERMAL EXPANSION OF ZRO2 AND HFO2 OVER RANGE 20-1200 DEGREES C
    FILATOV, SK
    FRANKKAM.VA
    [J]. SOVIET PHYSICS CRYSTALLOGRAPHY, USSR, 1970, 14 (05): : 696 - +
  • [10] Ferroelectricity in Simple Binary ZrO2 and HfO2
    Mueller, Johannes
    Boescke, Tim S.
    Schroeder, Uwe
    Mueller, Stefan
    Braeuhaus, Dennis
    Boettger, Ulrich
    Frey, Lothar
    Mikolajick, Thomas
    [J]. NANO LETTERS, 2012, 12 (08) : 4318 - 4323