Enhanced Electrical Properties of SrTiO3 Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition

被引：6
|
作者：
Yim, C. J. [1 ]
Kim, S. U. [1 ]
Kang, Y. S. [2 ]
Cho, M. -H. [2 ]
Ko, D. -H. [1 ]
机构：
[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea
[2] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2011年 / 14卷 / 10期
关键词：
SEED LAYER;
D O I：
10.1149/1.3609837
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
SrTiO3 (STO) thin films were grown on a Si substrate and a TiN electrode by a plasma-enhanced atomic layer deposition (PEALD) process using oxygen plasma. The amorphous STO thin films deposited by the PEALD process showed excellent step coverage, in excess of 97%, and no interfacial layer was detected. The electrical properties of the TiN/STO/TiN capacitor structures were measured by capacitance-voltage (C-V) testing after low temperature annealing in an oxygen atmosphere at 500 degrees C for 10 min. These conditions resulted in a product with the highest dielectric constant value (similar to 130). (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3609837] All rights reserved.
引用
收藏
页码：G45 / G48
页数：4
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