Enhanced Electrical Properties of SrTiO3 Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition

SrTiO3 (STO) thin films were grown on a Si substrate and a TiN electrode by a plasma-enhanced atomic layer deposition (PEALD) process using oxygen plasma. The amorphous STO thin films deposited by the PEALD process showed excellent step coverage, in excess of 97%, and no interfacial layer was detected. The electrical properties of the TiN/STO/TiN capacitor structures were measured by capacitance-voltage (C-V) testing after low temperature annealing in an oxygen atmosphere at 500 degrees C for 10 min. These conditions resulted in a product with the highest dielectric constant value (similar to 130). (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3609837] All rights reserved.