Enhanced Electrical Properties of SrTiO3 Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition

被引：6

作者：

Yim, C. J. ^{[1
]}

Kim, S. U. ^{[1
]}

Kang, Y. S. ^{[2
]}

Cho, M. -H. ^{[2
]}

Ko, D. -H. ^{[1
]}

机构：

[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea

[2] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2011年 / 14卷 / 10期

关键词：

SEED LAYER;

D O I：

10.1149/1.3609837

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

SrTiO3 (STO) thin films were grown on a Si substrate and a TiN electrode by a plasma-enhanced atomic layer deposition (PEALD) process using oxygen plasma. The amorphous STO thin films deposited by the PEALD process showed excellent step coverage, in excess of 97%, and no interfacial layer was detected. The electrical properties of the TiN/STO/TiN capacitor structures were measured by capacitance-voltage (C-V) testing after low temperature annealing in an oxygen atmosphere at 500 degrees C for 10 min. These conditions resulted in a product with the highest dielectric constant value (similar to 130). (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3609837] All rights reserved.

引用

页码：G45 / G48

页数：4

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