Electrical and structural properties of SrTiO3 thin films deposited by plasma-enhanced metalorganic chemical vapor deposition

The microstructure and electrical properties were investigated for SrTiO3(STO) thin films deposited on Pt/Ti/SiO2/Si substrates by PEMOCVD. The SrF2 phase existing in the STO films deposited at 450 degrees C influences the dielectric constant, dissipation factor, and leakage current density of STO films, The dielectric constant and dissipation factor of STO films deposited at 500 degrees C were 210 and 0.018 at 100 kHz, respectively, STO films were found to have paraelectric properties from the capacitance-voltage characteristics. Leakage current density of STO films at 500 degrees C was about 1.0 x 10(-8) A/cm(2) at an electric field of 70 kV/cm. The leakage current behaviors of STO films deposited at 500 and 550 degrees C were controlled by Schottky emission with applied electric field.