Epitaxial graphene FETs with high on/off ratio grown on 4H-SiC

被引：0
|
作者：
Yoh, Kanji [1 ]
Konishi, Keita [1 ]
Hibino, Hiroki [2 ]
机构：
[1] Hokkaido Univ, RCIQE, Sapporo, Hokkaido, Japan
[2] Basic Res Lab, Atsugi, Kanagawa, Japan
来源：
2009 9TH IEEE CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO) | 2009年
关键词：
graphene; SiC; GRAPHITE; GAS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
There have been technical issues for integrated graphene electronics applications such as low ON/OFF ratio due to its zero-gap band structure, lackof saturation characteristics and well-controlled fabrication method of graphene layers. Here wereport device characteristics of graphene FETs grown on 4H-SiC that show typical ambipolar effect against gate voltage and Ids-Vds curve with ON-OFF ratio of over 100 at 1.4K.
引用
收藏
页码：334 / 336
页数：3
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