Optimization of ON-state and switching performances for 15-20-kV 4H-SiC IGBTs

被引：31

作者：

Tamaki, Tomohiro ^{[1
,2
]}

Walden, Ginger G. ^{[2
,3
]}

Sui, Yang ^{[2
,3
]}

Cooper, James A. ^{[2
,3
]}

机构：

[1] Renesas Technol Corp, Takasaki, Gunma 3700021, Japan

[2] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA

[3] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2008年 / 55卷 / 08期

关键词：

device optimization; IGBT; switching frequency; 4H-SiC;

D O I：

10.1109/TED.2008.926594

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The 4H-SiC p-channel IGBTs designed to block 15 and 20 kV are optimized for minimum loss (ON-state plus switching power) by adjusting the parameters of the p JFET region, p- drift layer, and p+ buffer layer, using 2-D MEDICI simulations. Switching loss exhibits a strong dependence on buffer layer thickness,, doping, and lifetime due to their influence on the current tail. In contrast, drift layer lifetime has little effect on the crossover frequency at which the MOSFET and IGBT have equal loss.

引用

页码：1920 / 1927

页数：8

共 50 条

[41] 7 kV 4H-SiC GTO thyristors
Van Campen, S
Ezis, A
Zingaro, J
Storaska, G
Clarke, RC
Temple, V
Thompson, M
Hansen, T
SILICON CARBIDE 2002-MATERIALS, PROCESSING AND DEVICES, 2003, 742 : 381 - 386
[42] On The TCAD Based Design Diagnostic Study of 4H-SiC Based IGBTs
Nawaz, Muhammad
Chimento, Filippo
SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 1034 - 1037
[43] Theoretical Analysis of ON-State Performance Limit of 4H-SiC IGBT in Field-Stop Technology
Luo, Peng
Madathil, Sankara Narayanan Ekkanath
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (12) : 5621 - 5627
[44] A 2.7 kV 4H-SiC JBS Diode
HUANG Run-hua
LI Rui
CHEN Gang
LI Yun
电力电子技术, 2012, 46 (12) : 72 - 73
[45] 2 kV 4H-SiC junction FETs
Onose, H
Watanabe, A
Someya, T
Kobayashi, Y
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 1227 - 1230
[46] Effects of 5 MeV Proton Irradiation on 1200 V 4H-SiC VDMOSFETs ON-State Characteristics
Li, Dongxun
Zhang, Yuming
Tang, Xiaoyan
He, Yanjing
Song, Qingwen
Zhang, Yimen
IEEE ACCESS, 2020, 8 (104503-104510) : 104503 - 104510
[47] Evaluation of on-state resistance and boron-related levels in n-type 4H-SiC
Ciechonski, RR
Porro, S
Syväjärvi, M
Yakimova, R
SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 : 425 - 428
[48] Investigations on Degradation and Optimization of 1.2kV 4H-SiC MOSFET Under Repetitive Unclamped Inductive Switching Stress
Liu, Siyang
Sun, Weifeng
Qian, Qinsong
Gu, Chunde
Huang, Yu
Bai, Song
Chen, Gang
Huang, Runhua
Tao, Yonghong
Liu, Ao
2015 IEEE 27TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S (ISPSD), 2015, : 205 - 208
[49] Steady-state and transient characteristics of 10 kV 4H-SiC diodes
Levinshtein, ME
Mnatsakanov, TT
Ivanov, PA
Singh, R
Palmour, JW
Yurkov, SN
SOLID-STATE ELECTRONICS, 2004, 48 (05) : 807 - 811
[50] Improved on-state resistance with reliable reverse characteristics in 1.2 kV 4H-SiC MOSFET by selective nitrogen implantation assisted current spreading layer
Jang, Seung Yup
Kim, Jaemoo
Lee, Hojung
Kim, Kyu Sang
JAPANESE JOURNAL OF APPLIED PHYSICS, 2020, 59 (04)

← 1 2 3 4 5 →