Optimization of ON-state and switching performances for 15-20-kV 4H-SiC IGBTs

被引：31
|
作者：
Tamaki, Tomohiro [1 ,2 ]
Walden, Ginger G. [2 ,3 ]
Sui, Yang [2 ,3 ]
Cooper, James A. [2 ,3 ]
机构：
[1] Renesas Technol Corp, Takasaki, Gunma 3700021, Japan
[2] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
[3] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2008年 / 55卷 / 08期
关键词：
device optimization; IGBT; switching frequency; 4H-SiC;
D O I：
10.1109/TED.2008.926594
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The 4H-SiC p-channel IGBTs designed to block 15 and 20 kV are optimized for minimum loss (ON-state plus switching power) by adjusting the parameters of the p JFET region, p- drift layer, and p+ buffer layer, using 2-D MEDICI simulations. Switching loss exhibits a strong dependence on buffer layer thickness,, doping, and lifetime due to their influence on the current tail. In contrast, drift layer lifetime has little effect on the crossover frequency at which the MOSFET and IGBT have equal loss.
引用
收藏
页码：1920 / 1927
页数：8
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