Performance of EUV molecular resists based on fullerene derivatives

被引：8
|
作者：
Oizumi, Hiroaki [1 ]
Matsunaga, Kentaro [1 ]
Kaneyama, Koji [1 ]
Santillan, Julius Joseph [1 ]
Shiraishi, Gousuke [1 ]
Itani, Toshiro [1 ]
机构：
[1] Semicond Leading Edge Technol Inc Selete, Tsukuba, Ibaraki 3058569, Japan
来源：
ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXVIII | 2011年 / 7972卷
关键词：
EUV resist; sensitivity; resolution; line width roughness (LWR); fullerene; test device; FIELD EXPOSURE TOOL;
D O I：
10.1117/12.879302
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
This paper summarizes the development of EUV molecular resists based on fullerene derivatives: the lithographic evaluation results of EUV resists using a small-field exposure tool (SFET). Moreover this is the first report on the application of fullerene-based molecular resists to half-pitch (hp) 3x-nm test device fabrication using a full-field step-and-scan exposure tool (EUV1).
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收藏
页数：7
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