Lithographic performance and optimization of chemically amplified single layer resists for EUV lithography

被引：18

作者：

Watanabe, T ^{[1
]}

Kinoshita, H ^{[1
]}

Miyafuji, A ^{[1
]}

Irie, S ^{[1
]}

Shirayone, S ^{[1
]}

Mori, S ^{[1
]}

Yano, E ^{[1
]}

Hada, H ^{[1
]}

Ohmori, K ^{[1
]}

Komano, H ^{[1
]}

机构：

[1] Himeji Inst Technol, Lab Adv Sci & Technol Ind, Kamigoori, Hyogo 6781205, Japan

来源：

EMERGING LITHOGRAPHIC TECHNOLOGIES IV | 2000年 / 3997卷

关键词：

extreme ultra-violet lithography; single layer resist; chemically amplified resist;

D O I：

10.1117/12.390100

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The single layer chemically amplified resists are investigated for the extreme ultra-violet lithography. From the results of the sensitivity curve, the positive-tone resist of DP603 and the negative-tone resist of SAL601 have high sensitivities and high gamma values to the EUV exposure wavelength. Furthermore, by the optimization of both the dosage and the wafer focusing position, we succeed in replicating 0.056-mu m-resist-pattem width on the exposure-field size of 10 mm x 1 mm on an I-inches-diameter wafer. We confirm the resolution capability of the three-aspherical mirror imaging system that has been developed by the Himeji Institute of Technology.

引用

页码：600 / 607

页数：8

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