Performance of EUV molecular resists based on fullerene derivatives

被引：8

作者：

Oizumi, Hiroaki ^{[1
]}

Matsunaga, Kentaro ^{[1
]}

Kaneyama, Koji ^{[1
]}

Santillan, Julius Joseph ^{[1
]}

Shiraishi, Gousuke ^{[1
]}

Itani, Toshiro ^{[1
]}

机构：

[1] Semicond Leading Edge Technol Inc Selete, Tsukuba, Ibaraki 3058569, Japan

来源：

ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXVIII | 2011年 / 7972卷

关键词：

EUV resist; sensitivity; resolution; line width roughness (LWR); fullerene; test device; FIELD EXPOSURE TOOL;

D O I：

10.1117/12.879302

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

This paper summarizes the development of EUV molecular resists based on fullerene derivatives: the lithographic evaluation results of EUV resists using a small-field exposure tool (SFET). Moreover this is the first report on the application of fullerene-based molecular resists to half-pitch (hp) 3x-nm test device fabrication using a full-field step-and-scan exposure tool (EUV1).

引用

页数：7

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