Ultrafast laser-induced crystallization of amorphous silicon films

被引：75
|
作者：
Choi, TY [1 ]
Hwang, DJ
Grigoropoulos, CP
机构：
[1] Swiss Fed Inst Technol, Inst Energy Technol, CH-8092 Zurich, Switzerland
[2] Univ Calif Berkeley, Dept Mech Engn, Berkeley, CA 94720 USA
来源：
OPTICAL ENGINEERING | 2003年 / 42卷 / 11期
关键词：
ultrashort; amorphous silicon; pump and probe; ultrafast phase transition; crystallization;
D O I：
10.1117/1.1617312
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Ultrashort pulsed laser irradiation is used to crystallize 100-nm amorphous-si I icon (a-Si) films. The crystallization process is observed by time-resolved pump-and-probe reflection imaging in the range of 0.2 ps to 100 ns. The in-situ images, in conjunction with postprocessed scanning electron microscopy (SEM) and atomic force microscopy (AFM) mapping of the crystallized structure, provide evidence for nonthermal ultra-fast phase transition and subsequent surface-initiated crystallization. (C) 2003 Society of Photo-Optical Instrumentation Engineers.
引用
收藏
页码：3383 / 3388
页数：6
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