Ultrafast laser-induced crystallization of amorphous silicon films

被引：75

作者：

Choi, TY ^{[1
]}

Hwang, DJ

Grigoropoulos, CP

机构：

[1] Swiss Fed Inst Technol, Inst Energy Technol, CH-8092 Zurich, Switzerland

[2] Univ Calif Berkeley, Dept Mech Engn, Berkeley, CA 94720 USA

来源：

OPTICAL ENGINEERING | 2003年 / 42卷 / 11期

关键词：

ultrashort; amorphous silicon; pump and probe; ultrafast phase transition; crystallization;

D O I：

10.1117/1.1617312

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Ultrashort pulsed laser irradiation is used to crystallize 100-nm amorphous-si I icon (a-Si) films. The crystallization process is observed by time-resolved pump-and-probe reflection imaging in the range of 0.2 ps to 100 ns. The in-situ images, in conjunction with postprocessed scanning electron microscopy (SEM) and atomic force microscopy (AFM) mapping of the crystallized structure, provide evidence for nonthermal ultra-fast phase transition and subsequent surface-initiated crystallization. (C) 2003 Society of Photo-Optical Instrumentation Engineers.

引用

页码：3383 / 3388

页数：6

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