Ultrafast Infrared Laser Crystallization of Amorphous Ge Films on Glass Substrates

被引:2
|
作者
Cheng, Yuzhu [1 ]
Bulgakov, Alexander V. [2 ]
Bulgakova, Nadezhda M. [2 ]
Beranek, Jiri [2 ,3 ]
Zukerstein, Martin [2 ]
Milekhin, Ilya A. [1 ,4 ]
Popov, Alexander A. [5 ]
Volodin, Vladimir A. [1 ,4 ]
机构
[1] Novosibirsk State Univ, Phys Dept, Pirogova St 2, Novosibirsk 630090, Russia
[2] Czech Acad Sci, HiLASE Ctr, Inst Phys, Za Radnici 828, Dolni Brezany 25241, Czech Republic
[3] Czech Tech Univ, Fac Nucl Sci & Phys Engn, Trojanova 13, Prague 12001, Czech Republic
[4] Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Lavrentiev Ave 13, Novosibirsk 630090, Russia
[5] Russian Acad Sci, Inst Phys & Technol, Yaroslavl Branch, Yaroslavl 150007, Russia
关键词
germanium; thin films; ultrashort infrared laser annealing; crystallization; Raman spectroscopy; nonrefractory substrates; FEMTOSECOND; SILICON; GERMANIUM; DAMAGE; SI; RELAXATION; THRESHOLDS; ABSORPTION; ABLATION;
D O I
10.3390/mi14112048
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Amorphous germanium films on nonrefractory glass substrates were annealed by ultrashort near-infrared (1030 nm, 1.4 ps) and mid-infrared (1500 nm, 70 fs) laser pulses. Crystallization of germanium irradiated at a laser energy density (fluence) range from 25 to 400 mJ/cm2 under single-shot and multishot conditions was investigated using Raman spectroscopy. The dependence of the fraction of the crystalline phase on the fluence was obtained for picosecond and femtosecond laser annealing. The regimes of almost complete crystallization of germanium films over the entire thickness were obtained (from the analysis of Raman spectra with excitation of 785 nm laser). The possibility of scanning laser processing is shown, which can be used to create films of micro- and nanocrystalline germanium on flexible substrates.
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页数:14
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