Influence of field plates and surface traps on microwave silicon carbide MESFETs

被引：13
|
作者：
Nilsson, Per-Ake [1 ]
Allerstam, Fredrik [1 ]
Sudow, Mattias [1 ]
Andersson, Kristoffer [1 ]
Hjelmgren, Hans [1 ]
Sveinbjornsson, Einar O. [1 ]
Rorsman, Niklas [1 ]
机构：
[1] Chalmers, Microwave Elect Lab, S-41296 Gothenburg, Sweden
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2008年 / 55卷 / 08期
关键词：
field plate; MESFETs; passivation; silicon carbide (SiC); surface traps;
D O I：
10.1109/TED.2008.926633
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The influence of field plates and surface traps on silicon carbide MESFETs for microwave operation was investigated. By increasing the length of gate-connected field plates from 50 to 800 nm, it was possible to increase the gate-drain breakdown voltage of the devices from 125 to 170 V. At the same time, the current slump effect of traps in the passivation oxide was reduced. By using a combination of field plates and a passivation oxide with low interface trap density, it was possible to reach an output power density of 8 W/mm at 3 GHz.
引用
收藏
页码：1875 / 1879
页数：5
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