Experimental and numerical analysis of the multi-recessed gate structure for microwave silicon carbide power MESFETs

被引：0

作者：

邓小川 ^{[1
]}

冯震 ^{[2
]}

张波 ^{[1
]}

李肇基 ^{[1
]}

李亮 ^{[2
]}

潘宏菽 ^{[2
]}

机构：

[1] State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China

[2] The National Key Laboratory of ASIC

来源：

Chinese Physics B | 2009年 / 07期

关键词：

multi-recessed; microwave power; 4H-SiC MESFETs;

D O I：

暂无

中图分类号：

TN386 [场效应器件];

学科分类号：

摘要：

This paper reports that multi-recessed gate 4H-SiC MESFETs(metal semiconductor filed effect transistors) with a gate periphery of 5-mm are fabricated and characterized.The multi-recessed region under the gate terminal is applied to improve the gate-drain breakdown voltage and to alleviate the trapping induced instabilities by moving the current path away from the surface of the device.The experimental results demonstrate that microwave output power density,power gain and power-added efficiency for multi-finger 5-mm gate periphery SiC MESFETs with multi-recessed gate structure are about 29%,1.1dB and 7% higher than those of conventional devices fabricated in this work using the same process.

引用

页码：3018 / 3023

页数：6

共 33 条

[1] Experimental and numerical analysis of the multi-recessed gate structure for microwave silicon carbide power MESFETs
Deng Xiao-Chuan
Feng Zhen
Zhang Bo
Li Zhao-Ji
Li Liang
Pan Hong-Shu
CHINESE PHYSICS B, 2009, 18 (07) : 3018 - 3023
[2] Effects of a Multi-Recessed gate in Microwave 4H-SiC Power MESFETs
Deng, Xiao Chuan
Feng, Zhen
Zhang, Bo
Li, ZhaoJi
Li, Liang
2009 INTERNATIONAL CONFERENCE ON COMMUNICATIONS, CIRCUITS AND SYSTEMS PROCEEDINGS, VOLUMES I & II: COMMUNICATIONS, NETWORKS AND SIGNAL PROCESSING, VOL I/ELECTRONIC DEVICES, CIRUITS AND SYSTEMS, VOL II, 2009, : 645 - +
[3] Microwave characterisation and modelling of silicon carbide power MESFETS: towards a nonlinear model
Royet, AS
Cabon, B
Ouisse, T
Brylinsky, C
Noblanc, O
Dua, C
IEE PROCEEDINGS-MICROWAVES ANTENNAS AND PROPAGATION, 2003, 150 (02) : 85 - 89
[4] Experimental and numerical thermal analysis for direct microwave heating of silicon carbide
Ghorbel, Ines
Ganster, Patrick
Moulin, Nicolas
Meunier, Christophe
Bruchon, Julien
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2021, 104 (01) : 302 - 312
[5] PULSED IV CHARACTERIZATION OF POWER GAAS-MESFETS WITH DOUBLE-RECESSED GATE STRUCTURE
ASANO, K
MATSUNAGA, K
TAKAHASHI, H
KANAMORI, M
HIRAYAMA, H
MOCHIZUKI, A
NEC RESEARCH & DEVELOPMENT, 1992, 33 (03): : 280 - 285
[6] 2-DIMENSIONAL NUMERICAL-SIMULATION OF GAAS-MESFETS WITH RECESSED-GATE STRUCTURE
FRENSLEY, WR
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) : 1829 - 1829
[7] Improved performance of 4H-silicon carbide metal semiconductor field effect transistors with multi-recessed source/drain drift regions
Jia, Hujun
Pei, Xiaoyan
Sun, Zhelin
Zhang, Hang
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2015, 31 : 240 - 244
[8] A new approach to maximizing the power handling capability in recessed-gate silicon carbide static induction transistors
Choi, YC
Cha, HY
Chandrashekhar, A
Eastman, LF
Spencer, MG
2005 IEEE 36th Power Electronic Specialists Conference (PESC), Vols 1-3, 2005, : 2171 - 2174
[9] STEP-RECESSED GATE STRUCTURE WITH AN UNDOPED SURFACE-LAYER FOR MICROWAVE AND MILLIMETER-WAVE HIGH-POWER, HIGH-EFFICIENCY GAAS-MESFETS
TAKAHASHI, H
ASANO, K
MATSUNAGA, K
IWATA, N
MOCHIZUKI, A
HIRAYAMA, H
IEICE TRANSACTIONS ON COMMUNICATIONS ELECTRONICS INFORMATION AND SYSTEMS, 1991, 74 (12): : 4141 - 4146
[10] Temperature dependence of silicon and silicon carbide power devices: An experimental analysis
Amairi, Mahbouba
Mtimet, Sameh
Ben Salah, Tarek
Morel, Herve
2012 16TH IEEE MEDITERRANEAN ELECTROTECHNICAL CONFERENCE (MELECON), 2012, : 97 - 101

← 1 2 3 4 →