Influence of field plates and surface traps on microwave silicon carbide MESFETs

被引：13

作者：

Nilsson, Per-Ake ^{[1
]}

Allerstam, Fredrik ^{[1
]}

Sudow, Mattias ^{[1
]}

Andersson, Kristoffer ^{[1
]}

Hjelmgren, Hans ^{[1
]}

Sveinbjornsson, Einar O. ^{[1
]}

Rorsman, Niklas ^{[1
]}

机构：

[1] Chalmers, Microwave Elect Lab, S-41296 Gothenburg, Sweden

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2008年 / 55卷 / 08期

关键词：

field plate; MESFETs; passivation; silicon carbide (SiC); surface traps;

D O I：

10.1109/TED.2008.926633

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The influence of field plates and surface traps on silicon carbide MESFETs for microwave operation was investigated. By increasing the length of gate-connected field plates from 50 to 800 nm, it was possible to increase the gate-drain breakdown voltage of the devices from 125 to 170 V. At the same time, the current slump effect of traps in the passivation oxide was reduced. By using a combination of field plates and a passivation oxide with low interface trap density, it was possible to reach an output power density of 8 W/mm at 3 GHz.

引用

页码：1875 / 1879

页数：5

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