Microwave silicon carbide Schottky diodes

被引：6
|
作者：
Eriksson, J [1 ]
Rorsman, N [1 ]
Zirath, H [1 ]
机构：
[1] Chalmers Univ Technol, Dept Microelect, Microwave Elect Lab, SE-41296 Gothenburg, Sweden
来源：
ELECTRONICS LETTERS | 2001年 / 37卷 / 04期
关键词：
Cutoff frequency - High frequency applications - High power applications - Microwave diodes - Reverse voltage - Silicon carbide diodes - Specific epistructure;
D O I：
10.1049/el:20010163
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A silicon carbide (4H-SiC) Schottky barrier diode designed for high power and high frequency applications is investigated. Current and capacitance measurements show that a diode with a radius of 5 mum has a cutoff frequency of 91GHz. A larger 4H-SiC Schottky diode with an anode radius of 50 mum is shown to handle a reverse voltage of 40V, while hearing a series resistance of 2.5 Omega and a cutoff Frequency of 10GHz. Empirical formulas for the series resistance and capacitance as a function of anode radius are derived for vertical diodes with cylindrical symmetry on the specific epistructure used in this work.
引用
收藏
页码：250 / 252
页数：3
相关论文
共 50 条
  • [1] 4H-silicon carbide Schottky barrier diodes for microwave applications
    Eriksson, J
    Rorsman, N
    Zirath, H
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2003, 51 (03) : 796 - 804
  • [2] Deep levels in silicon carbide Schottky diodes
    Castaldini, A
    Cavallini, A
    Polenta, L
    Nava, F
    Canali, C
    Lanzieri, C
    [J]. APPLIED SURFACE SCIENCE, 2002, 187 (3-4) : 248 - 252
  • [3] Low frequency noise in silicon carbide Schottky diodes
    Anghel, L
    Ouisse, T
    Billon, T
    Lassagne, P
    Jaussaud, C
    [J]. DIAMOND AND RELATED MATERIALS, 1997, 6 (10) : 1494 - 1496
  • [4] Temperature Dependent Design of Silicon Carbide Schottky Diodes
    Radhakrishnan, Rahul
    Witt, Tony
    Woodin, Richard
    [J]. 2014 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), 2014, : 150 - 153
  • [5] Comparison of 1280V silicon carbide Schottky diodes and silicon power diodes
    Chang, HR
    Gupta, RN
    Winterhalter, C
    Hanna, E
    [J]. 35TH INTERSOCIETY ENERGY CONVERSION ENGINEERING CONFERENCE & EXHIBIT (IECEC), VOLS 1 AND 2, TECHNICAL PAPERS, 2000, : 174 - 179
  • [6] Output Capacitance Loss Characterization of Silicon Carbide Schottky Diodes
    Tong, Zikang
    Zulauf, Grayson
    Xu, JiaLe
    Plummer, Ames D.
    Rivas-Davila, Juan
    [J]. IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2019, 7 (02) : 865 - 878
  • [7] Silicon carbide Schottky diodes and MOSFETs: solutions to performance problems
    Guy, Owen J.
    Lodzinski, Michal
    Castaing, Ambroise
    Igic, P. M.
    Perez-Tomas, Amador
    Jennings, Michael R.
    Mawby, Philip A.
    [J]. 2008 13TH INTERNATIONAL POWER ELECTRONICS AND MOTION CONTROL CONFERENCE, VOLS 1-5, 2008, : 2464 - +
  • [8] Microwave characteristics of BARITT diodes based on silicon carbide
    Aroutiounian, VM
    Buniatian, VV
    Soukiassian, P
    [J]. SOLID-STATE ELECTRONICS, 1999, 43 (02) : 343 - 348
  • [9] Microwave characteristics of BARITT diodes based on silicon carbide
    Aroutiounian, VM
    Buniatyan, VV
    Soukiassian, P
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (03) : 585 - 588
  • [10] Epitaxial Layer Parameters Estimation Approach of Silicon Carbide Schottky Diodes
    Salah, Tarek Ben
    Amairi, Mahbouba
    Sassi, Zina
    Morel, Herve
    [J]. SENSOR LETTERS, 2009, 7 (05) : 707 - 711
12345