Microwave characteristics of BARITT diodes based on silicon carbide

被引：18
|
作者：
Aroutiounian, VM
Buniatian, VV
Soukiassian, P
机构：
[1] Yerevan State Univ, Dept Phys Semicond, Yerevan 375049, Armenia
[2] Ctr Etud Saclay, CEA,DSM, DRECAM, SRSIM, F-91191 Gif Sur Yvette, France
[3] Univ Paris Sud, Dept Phys, F-91405 Orsay, France
来源：
SOLID-STATE ELECTRONICS | 1999年 / 43卷 / 02期
关键词：
D O I：
10.1016/S0038-1101(98)00279-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Microwave characteristics of BARITT diodes made of silicon carbide are investigated. It is shown that the negative resistance of a p(+)-n-p(+) structure made of different polytypes of SiC is an order of magnitude higher in absolute value in comparison with a Si p(+)-n-p(+) structure, all other factors being equal, even in the absence of trap levels. Furthermore it is shown that the dynamic negative resistance, the power output and efficiency increase with an increase of the density of traps. The effects of trap levels in the band gap of the semiconductor on the impedance, power output and efficiency of SIC BARITT diodes are examined. (C) 1998 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：343 / 348
页数：6
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