HEATING RATES OF SILICON CARBIDE IN A MICROWAVE FIELD

被引：0

作者：

Mellodge, P. ^{[1
]}

Folz, D. ^{[1
]}

Clark, D. ^{[1
]}

West, J. ^{[2
]}

机构：

[1] Virginia Polytech Inst & State Univ, Dept Mat Sci & Engn, Blacksburg, VA 24061 USA

[2] PNES Inc, Gainesville, FL 32609 USA

来源：

MECHANICAL PROPERTIES AND PERFORMANCE OF ENGINEERING CERAMICS AND COMPOSITES II | 2007年 / 27卷 / 02期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

When heated using microwave energy, silicon carbide (SiC) exhibits a nonlinear heating behavior with respect to temperature. Experiments in a multimode cavity show that at higher microwave powers, there are two distinct regions in the heating rate versus temperature curve. In each temperature range, the heating rate closely follows a linear model, but the slopes of the two regions differ. This data is fit to a hybrid control system model so that a feedback controller can be designed to cause the SiC to precisely follow a given temperature profile.

引用

页码：505 / +

页数：3

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