Limitations of Control of Electrophysical Characteristics of Quantum-Size Structures by Electrochemical Capacitance-Voltage Profiling

被引：1

作者：

Goncharov, V. E. ^{[1
,2
]}

Nikonov, A. V. ^{[1
,3
]}

Batmanovskaya, N. S. ^{[1
,2
]}

Pashkeev, D. A. ^{[1
,2
]}

Kudryashov, A. V. ^{[3
]}

机构：

[1] Orion Res & Prod Assoc, Moscow 111538, Russia

[2] MIREA Russian Technol Univ, Moscow 119454, Russia

[3] Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Oblast, Russia

来源：

JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS | 2020年 / 65卷 / 03期

关键词：

electrochemical capacitance-voltage profiling; concentration of carriers; heteroepitaxial structure; quantum wells; GaAs; AlGaAs;

D O I：

10.1134/S1064226920030055

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A method is proposed to control the distribution of carrier concentration over the profile of multilayer heteroepitaxial structures (HESs) with quantum-size active region based on the AlGaAs/GaAs heteropair grown with the aid of molecular beam epitaxy using electrochemical capacitance-voltage profiling (ECV). A calculation model for the region of the space charge at the electrolyte-semiconductor interface is developed. The ECV profiles of the HES grown on the GaAs < 100 > substrates are analyzed. The limiting depths of the space-charge regions are calculated for different concentrations of carriers in the layers under study. Limitations of the method to control the distribution of carrier concentration in the quantum-size region of the HES are outlined.

引用

页码：311 / 315

页数：5

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