Limitations of Control of Electrophysical Characteristics of Quantum-Size Structures by Electrochemical Capacitance-Voltage Profiling

A method is proposed to control the distribution of carrier concentration over the profile of multilayer heteroepitaxial structures (HESs) with quantum-size active region based on the AlGaAs/GaAs heteropair grown with the aid of molecular beam epitaxy using electrochemical capacitance-voltage profiling (ECV). A calculation model for the region of the space charge at the electrolyte-semiconductor interface is developed. The ECV profiles of the HES grown on the GaAs < 100 > substrates are analyzed. The limiting depths of the space-charge regions are calculated for different concentrations of carriers in the layers under study. Limitations of the method to control the distribution of carrier concentration in the quantum-size region of the HES are outlined.