Characterization of GaAs/AlGaAs mid-infrared emitters

被引：0
|
作者：
Hvozdara, L [1 ]
Heyman, JN [1 ]
Strasser, G [1 ]
Unterrainer, K [1 ]
Kruck, P [1 ]
Helm, M [1 ]
Gornik, E [1 ]
机构：
[1] Vienna Tech Univ, Inst Feskorperelekt, A-1040 Vienna, Austria
来源：
1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS | 1998年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the design, growth, and characterization of mid-infrared emitters based on the GaAs/AlGaAs material system. The structures are unipolar intersubband emitters. Photocurrent, transmission and integral emission power measurements are performed. We also report the temperature dependence of the photocurrent and current voltage characteristics of two emitters.
引用
收藏
页码：565 / 568
页数：4
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