Electric field influence on mid-infrared absorption and interband photoluminescence in tunnel-coupled GaAs/AlGaAs quantum wells

被引：0
|
作者：
Vinnichenko, M. Ya [1 ]
Sofronov, A. N. [1 ]
Balagula, R. M. [1 ]
Firsov, D. A. [1 ]
Vorobjev, L. E. [1 ]
机构：
[1] Peter Great St Petersburg Polytech Univ, 29 Polytech Skaya Str, St Petersburg 195251, Russia
来源：
33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS | 2017年 / 864卷
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1088/1742-6596/864/1/012070
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The influence of transverse and lateral electric field on the mid-infrared intersubband light absorption is experimentally investigated in tunnel-coupled GaAs/AlGaAs quantum wells. Observed absorption modulation in electric field is related to the electron redistribution between the quantum well states resulting in variation of space charge in the structure. This phenomenon in transverse electric field is connected with a change of potential profile, whereas in lateral field effect is caused by electron heating. Electron heating also leads to a modulation of near-infrared interband photoluminescence under lateral electric field.
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页数：4
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