Recent advances in mid-infrared (3-6 μm) emitters

We describe the metal-organic chemical vapor deposition (MOCVD) of InAsSb/InAs multiple quantum well (MQW) and InAsSb/InAsP strained-layer superlattice (SLS) active regions for use in mid-infrared emitters. We have made gain-guided, injection lasers using undoped, p-type AlAs0.16Sb0.84 for optical confinement and both strained InAsSb/InAs MQW and InAsSb/InAsP SLS active regions. The lasers and light emitting diodes (LED) utilize the semi-metal properties of a p-GaAsSb/nInAs heterojunction as a source for electrons injected into active regions. A multiple-stage LED utilizing this semi-metal injection scheme is reported. Gain-guided, injected lasers with a strained InAsSb/InAs MQW active region operated up to 210 K in pulsed mode with an emission wavelength of 3.8-3.9 mu m and a characteristic temperature of 29-40 K. We also present results for both optically pumped and injection lasers with InAsSb/InAsP SLS active regions. The maximum operating temperature of an optically pumped 3.7 mu m SLS laser was 240 K. An SLS LED emitted at 4.0 mu m with 80 mu W of power at 300 K. (C) 1998 Published by Elsevier Science S.A. All rights reserved.