Photoluminescence and transport properties of multilayer InAs/GaAs structures with quantum dots

被引：9
|
作者：
Kul'bachinskii, VA [1 ]
Kytin, VG [1 ]
Lunin, RA [1 ]
Golikov, AV [1 ]
Malkina, IG [1 ]
Zvonkov, BN [1 ]
Saf'yanov, YN [1 ]
机构：
[1] Moscow MV Lomonosov State Univ, Moscow 119899, Russia
来源：
SEMICONDUCTORS | 1999年 / 33卷 / 03期
关键词：
D O I：
10.1134/1.1187687
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The transport and optical properties of InAs/GaAs structures with quantum dots on a vicinal surface have been investigated as a function of InAs content. It was found that the quantum dots form two-dimensional hole or electron layers, from which the Shubnikov-de Haas effect was observed. The temperature dependence of the resistance was measured in the [110] and [(1) over bar 10] directions in the temperature range 4.2-300 K, and the anisotropy of the conductivity was found. Strong localization occurs when electrons are trapped in InAs dots. The spectra of inplane photoluminescence showed strong polarization of the quantum-dot radiation. (C) 1999 American Institute of Physics. [S1063-7826(99)01303-4].
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收藏
页码：318 / 322
页数：5
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