InAs quantum dots in multilayer GaAs-based heterostructures

被引：6

作者：

Pashaev, EM

Yakunin, SN

Zaitsev, AA

Mokerov, VG

Fedorov, YV

Horvath, ZJ

Imanov, RM

机构：

[1] Russian Acad Sci, Shubnikov Inst Crystallog, Moscow 117333, Russia

[2] Moscow Inst Radio Engn Elect & Automat, Moscow 117334, Russia

[3] Russian Acad Sci, Ctr Micro & Nanoelect IRE, Moscow 101999, Russia

[4] Res Inst Tech Phys & Mat Sci, H-114 Budapest, Hungary

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2003年 / 195卷 / 01期

关键词：

D O I：

10.1002/pssa.200306298

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Multilayer GaAs-based heterostructures grown by molecular beam epitaxy are studied by X-ray diffraction, and the mechanisms of formation of InAs quantum dots are discussed. Quantum dots, nearly pyramidal in shape, can be randomly or orderly distributed in the GaAs matrix. Ordering is already present in heterostructures containing as few as three layers of quantum dots. Superlattices of two types, coexisting in the same heterostructure, are formed. One of them is constituted of quantum dots and the other of equally spaced InAs wetting layers.

引用

页码：204 / 208

页数：5

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