Detrapping Kinetics in N-polar AlGaN/GaN MIS-HEMTs

被引：2

作者：

Chiocchetta, Francesca ^{[1
]}

Calascione, Claudia ^{[1
]}

De Santi, Carlo ^{[1
]}

Sharma, Chandan ^{[1
]}

Rampazzo, Fabiana ^{[1
]}

Zheng, Xun ^{[2
]}

Romanczyk, Brian ^{[2
]}

Guidry, Matt ^{[2
]}

Li, Haoran ^{[2
]}

Keller, Stacia ^{[2
]}

Mishra, Umesh ^{[2
]}

Meneghesso, Gaudenzio ^{[2
]}

Meneghini, Matteo ^{[1
]}

Zanoni, Enrico ^{[1
]}

机构：

[1] Univ Padua, Dept Informat Engn, Padua, Italy

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA) | 2021年

关键词：

Gallium Nitride; N-polar; Detrapping Kinetics; Threshold Voltage Transients;

D O I：

10.1109/WiPDA49284.2021.9645107

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated the influence of aluminum concentration in the AlGaN cap layer on the stability of threshold voltage under gate and drain stress voltages. The devices examined are N-polar GaN MIS-HEMTs with a 2.6nm layer of AlxGa1-xN cap under the gate contact. The devices have three different Al concentration (x=22%, x=34%, x=46%) in the AlGaN cap layer. DC measurements show that the devices with a higher Al concentration have a lower gate leakage current. In this work we found out: 1) the amount of threshold voltage shift during stress in these devices increases linearly with the value of gate leakage current at the different bias conditions 2) a higher Al percentage in AlGaN cap layer can suppress gate leakage current and thus reduce the instability of threshold voltage under high gate and drain filling voltages.

引用

页码：90 / 94

页数：5

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