Positive Shift Suppression in Threshold Voltage of AlGaN/GaN MIS-HEMTs

被引：0
|
作者：
Liu, Meihua [1 ]
Chang, Kuan-chang [1 ]
Lin, Xinnan [1 ]
Li, Lei [1 ]
Jin, Yufeng [2 ]
机构：
[1] PKUSZ, Shenzhen Key Lab Adv Electron Device & Integrat, ECE, Shenzhen, Peoples R China
[2] PKUSZ, ECE, TSV 3D Integrated Micro Nanosyst Lab, Shenzhen, Peoples R China
来源：
2019 8TH INTERNATIONAL SYMPOSIUM ON NEXT GENERATION ELECTRONICS (ISNE) | 2019年
基金：
中国国家自然科学基金;
关键词：
threshold voltage; positive shift; GaN HEMTs; supercritical treatment;
D O I：
10.1109/isne.2019.8896561
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we reported a supercritical treatment technology to suppress the positive shift in threshold voltage. After treatment, threshold voltage shift (Delta V-th) under forward gate bias stress decreased from 4.05V to 0.15V, gate leakage current was reduced from 10(-9) mA/mm to 10(-11) mA/mm. It was suggested that nitrogen ions could modify interface state traps with a broad distribution of trapping, leading to suppressed gate leakage current and threshold voltage drifts.
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页数：2
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