AlGaN/GaN MIS-HEMTs with ZrO2 gate insulator

被引：0

作者：

Sugimoto, T ^{[1
]}

Ohno, Y ^{[1
]}

Kishimoto, S ^{[1
]}

Maezawa, K ^{[1
]}

Osaka, J ^{[1
]}

Mizutani, T ^{[1
]}

机构：

[1] Nagoya Univ, Dept Quantum Engn, Grad Sch Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS | 2005年 / 184卷

关键词：

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

AlGaN/GaN MIS-HEMTs using ZrO2 gate insulator with a large dielectric constant have been successfully fabricated. The gate leakage current decreased by more than three orders of magnitude compared to that of the conventional AlGaN/GaN HEMTs without the ZrO2 gate insulator. Current collapse has also been suppressed in the MIS-HEMTs. The decrease in g(mmax), which was observed in the case of Si3N4 MIS-HEMTs, was suppressed in the present MIS-HEMTs demonstrating the effectiveness of the ZrO2 gate insulator.

引用

页码：279 / 282

页数：4

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