AlGaN/GaN MIS-HEMTs with ZrO2 gate insulator

被引：0

作者：

Sugimoto, T ^{[1
]}

Ohno, Y ^{[1
]}

Kishimoto, S ^{[1
]}

Maezawa, K ^{[1
]}

Osaka, J ^{[1
]}

Mizutani, T ^{[1
]}

机构：

[1] Nagoya Univ, Dept Quantum Engn, Grad Sch Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS | 2005年 / 184卷

关键词：

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

AlGaN/GaN MIS-HEMTs using ZrO2 gate insulator with a large dielectric constant have been successfully fabricated. The gate leakage current decreased by more than three orders of magnitude compared to that of the conventional AlGaN/GaN HEMTs without the ZrO2 gate insulator. Current collapse has also been suppressed in the MIS-HEMTs. The decrease in g(mmax), which was observed in the case of Si3N4 MIS-HEMTs, was suppressed in the present MIS-HEMTs demonstrating the effectiveness of the ZrO2 gate insulator.

引用

页码：279 / 282

页数：4

共 50 条

[21] Detrapping Kinetics in N-polar AlGaN/GaN MIS-HEMTs
Chiocchetta, Francesca
Calascione, Claudia
De Santi, Carlo
Sharma, Chandan
Rampazzo, Fabiana
Zheng, Xun
Romanczyk, Brian
Guidry, Matt
Li, Haoran
Keller, Stacia
Mishra, Umesh
Meneghesso, Gaudenzio
Meneghini, Matteo
Zanoni, Enrico
[J]. 2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), 2021, : 90 - 94
[22] Planar Wrap-Around Gated AlGaN/GaN MIS-HEMTs
Liu, Peng
Xie, Chuncheng
Chen, Jianguo
Chen, Dongmin
[J]. IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 2014, 27 (03) : 422 - 425
[23] Evaluation of SiN films for AlGaN/GaN MIS-HEMTs on Si(111)
Cordier, Y.
Lecotonnec, A.
Chenot, S.
Baron, N.
Nacer, F.
Goullet, A.
Lhermite, H.
El Kazzi, M.
Regreny, P.
Hollinger, G.
Besland, M. P.
[J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2, 2009, 6 : S1016 - S1019
[24] Dual-gate AlGaN/GaN MIS-HEMTs using Si3N4 as the gate dielectric
Gao, Tao
Xu, Ruimin
Zhang, Kai
Kong, Yuechan
Zhou, Jianjun
Kong, Cen
Dong, Xun
Chen, Tangsheng
Hao, Yue
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2015, 30 (11)
[25] Characterization of different trap states in AlGaN/GaN MIS-HEMTs under high reverse gate stress
Zhang, Hao
Zheng, Xuefeng
Wang, Xiaohu
Zhu, Tian
Wang, Yingzhe
Ma, Xiaohua
Hao, Yue
[J]. MICRO AND NANOSTRUCTURES, 2023, 178
[26] Effect of Reverse Bias Annealing on the Properties of AlGaN/GaN MIS-HEMTs with Recessed-gate Structure
Gamachi, W.
Ishii, K.
Asubar, J. T.
Tokuda, H.
Kuzuhara, M.
[J]. 2017 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK), 2017, : 88 - 89
[27] Fabrication of AlGaN/GaN MIS-HEMTs with Post-growth Annealing
Liu, Meihua
Zhang, Yong
Huang, Guoyong
[J]. 2023 7TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM, 2023,
[28] AlGaN/GaN MIS-HEMTs with fT of 194 GHz at 16 K
Endoh, A.
Watanabe, I.
Yamashita, Y.
Mimura, T.
Matsui, T.
[J]. ELECTRONICS LETTERS, 2008, 44 (04) : 319 - 320
[29] Positive Shift Suppression in Threshold Voltage of AlGaN/GaN MIS-HEMTs
Liu, Meihua
Chang, Kuan-chang
Lin, Xinnan
Li, Lei
Jin, Yufeng
[J]. 2019 8TH INTERNATIONAL SYMPOSIUM ON NEXT GENERATION ELECTRONICS (ISNE), 2019,
[30] Impact of Interface Treatment on Dynamic Characteristic of AlGaN/GaN MIS-HEMTs
Han J.
Zhao J.-H.
Zhao J.
Xing Y.-H.
Cao X.
Fu K.
Song L.
Deng X.-G.
Zhang B.-S.
[J]. Faguang Xuebao/Chinese Journal of Luminescence, 2019, 40 (07): : 915 - 921

← 1 2 3 4 5 →