Fine structure splitting in the optical spectra of single GaAs quantum dots

被引：880
|
作者：
Gammon, D
Snow, ES
Shanabrook, BV
Katzer, DS
Park, D
机构：
[1] Naval Research Laboratory, Washington, DC
来源：
PHYSICAL REVIEW LETTERS | 1996年 / 76卷 / 16期
关键词：
D O I：
10.1103/PhysRevLett.76.3005
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We report a photoluminescence study of excitons localized by interface fluctuations in a narrow GaAs/AlGaAs quantum well. This type of structure provides a valuable system for the optical study of quantum dots. By reducing the area of the sample studied down to the optical near-field regime, only a few dots are probed. With resonant excitation we measure the excited-state spectra of single quantum dots. Many of the spectral lines are linearly polarized with a fine structure splitting of 20-50 mu eV. These optical properties are consistent with the characteristic asymmetry of the interface fluctuations.
引用
收藏
页码：3005 / 3008
页数：4
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