Future Prospects of Widebandgap (WBG) Semiconductor Power Switching Devices

被引:83
|
作者
Shenai, Krishna [1 ]
机构
[1] LoPel Corp, Naperville, IL 60564 USA
关键词
Cost; high-frequency switching; junction temperature; manufacturing; material defects; packaging; thermal management; widebandgap (WBG); HIGH-VOLTAGE; SILICON; MOSFETS; RELIABILITY; GROWTH;
D O I
10.1109/TED.2014.2360641
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Electrical power switching devices based on widebandgap (WBG) semiconductors have the potential for transformative impact on a wide range of energy conversion applications. Significantly improved electrical and thermal conductivities of WBG semiconductors compared with the semiconductor silicon have the potential for more efficient, compact, and robust power conversion systems. However, to offset inherently higher manufacturing cost of WBG power devices and obtain system-level benefits, power converters need to be operated at higher semiconductor chip junction temperatures and/or at higher switching frequencies. This paper discusses the future prospects of WBG-based power electronics by considering the current state of the art of WBG chip manufacturing, packaging, and thermal management technologies.
引用
收藏
页码:248 / 257
页数:10
相关论文
共 50 条
  • [21] High Power Switching Devices: Past, Present and Future
    Shammas, N. Y. A.
    Eio, S.
    Chamumd, D.
    [J]. CISST'10: PROCEEDINGS OF THE 4TH WSEAS INTERNATIONAL CONFERENCE ON CIRCUITS, SYSTEMS, SIGNAL AND TELECOMMUNICATIONS, 2009, : 192 - 209
  • [22] Modelling of Power Semiconductor Devices Switching and Conduction Losses in a Power Electronic System
    Hashim, N. S.
    Poobalan, B.
    Zakaria, N. F.
    Natarajan, Manikandan
    Shaari, Safizan
    [J]. INTERNATIONAL JOURNAL OF NANOELECTRONICS AND MATERIALS, 2023, 16 (01): : 177 - 185
  • [23] PROSPECTS FOR SEMICONDUCTOR QUANTUM DEVICES
    REED, MA
    SEABAUGH, AC
    [J]. MOLECULAR AND BIOMOLECULAR ELECTRONICS, 1994, 240 : 15 - 42
  • [24] Wide Bandgap (WBG) Power Devices and Their Impacts On Power Delivery Systems
    Huang, Alex Q.
    [J]. 2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2016,
  • [25] Soft-switching - The Key to High Power WBG Converters
    Divan, Deepak
    An, Zheng
    Kandula, Prasad
    [J]. 2018 INTERNATIONAL POWER ELECTRONICS CONFERENCE (IPEC-NIIGATA 2018 -ECCE ASIA), 2018, : 4001 - 4008
  • [26] Recent development and future prospects of Power SiC devices.
    Nakamura, T.
    Nakano, Y.
    Aketa, M.
    Hanada, T.
    [J]. 2014 INTERNATIONAL POWER ELECTRONICS CONFERENCE (IPEC-HIROSHIMA 2014 - ECCE-ASIA), 2014, : 2074 - 2074
  • [27] A Critique of Wide Bandgap (WBG) Power Semiconductor Device Datasheets
    Shenai, Krishna
    [J]. GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 4, 2014, 64 (07): : 13 - 17
  • [28] Parasitic inductance effects on the switching loss measurement of power semiconductor devices
    Shen, Yanqun
    Jiang, Jian
    Xiong, Yan
    Deng, Yan
    He, Xiangning
    Zeng, Zhaohui
    [J]. 2006 IEEE INTERNATIONAL SYMPOSIUM ON INDUSTRIAL ELECTRONICS, VOLS 1-7, 2006, : 847 - +
  • [29] A bond graph approach for modeling switching losses of power semiconductor devices
    Garcia, J
    Dauphin-Tanguy, G
    Rombaut, C
    [J]. 1997 INTERNATIONAL CONFERENCE ON BOND GRAPH MODELING AND SIMULATION (ICBGM'97), 1997, 29 (01): : 207 - 212
  • [30] NEW PRINCIPLES OF HIGH-POWER SWITCHING WITH SEMICONDUCTOR-DEVICES
    GREKHOV, IV
    [J]. SOLID-STATE ELECTRONICS, 1989, 32 (11) : 923 - 930