A bond graph approach for modeling switching losses of power semiconductor devices

被引：0
|
作者：
Garcia, J [1 ]
Dauphin-Tanguy, G [1 ]
Rombaut, C [1 ]
机构：
[1] Ecole Cent Lille, LAIL, URA CNRS D1440, F-59651 Villeneuve Dascq, France
来源：
1997 INTERNATIONAL CONFERENCE ON BOND GRAPH MODELING AND SIMULATION (ICBGM'97) | 1997年 / 29卷 / 01期
关键词：
bond graph; eletrothermal model; semiconductor switches; switching losses; conduction losses;
D O I：
暂无
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
A methodology is presented to model the dynamic electrothermal behavior of a switch semiconductor device based on the bond graph methodology. This model is centered around the idea of having a single bond graph model, i.e, a single set of dynamic equations, regardless of the switch state. The ON-state characteristics as well as the switching times are considered.
引用
收藏
页码：207 / 212
页数：6
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