Review on Semiconductor Pulsed Power Switching Devices

被引：0

作者：

Liang, Lin ^{[1
]}

Yan, Xiaoxue ^{[1
]}

Huang, Xinyuan ^{[1
]}

Qing, Zhengheng ^{[1
]}

Yang, Zewei ^{[1
]}

Shang, Hai ^{[1
]}

机构：

[1] State Key Laboratory of Advanced Electromagnetic Engineering and Technology, School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Hubei Province, Wuhan,430074, China

来源：

Zhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering | 2022年 / 42卷 / 23期

基金：

中国国家自然科学基金;

关键词：

Drift step recovery diode - Drift step-recovery diodes - Fast ionization dynistor - Fast ionization dynistors - Power switching devices - Pulsed power switching - Pulsed-power - Reversely switched dynistor - Switching devices;

D O I：

10.13334/j.0258-8013.pcsee.212101

中图分类号：

学科分类号：

摘要：

The special types of semiconductor switching devices applied in the pulsed power area were reviewed in this paper, including reversely switched dynistor (RSD), drift step recovery diode (DSRD) and fast ionization dynistor (FID). They are microsecond, nanosecond and picosecond range in time scale, respectively, and Si-based and SiC-based in material. The operation principle, key technology and application of the devices as well as some research progress were introduced, and the future development trend was prospected. ©2022 Chin.Soc.for Elec.Eng. 8631.

引用

页码：8631 / 8651

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