Reliability of Wide Bandgap Semiconductor Power Switching Devices

被引：7
|
作者：
Shenai, Krishna [1 ]
机构：
[1] Univ Toledo, Dept Elect Engn & Comp Sci, Toledo, OH 43606 USA
来源：
PROCEEDINGS OF THE IEEE 2010 NATIONAL AEROSPACE AND ELECTRONICS CONFERENCE (NAECON) | 2010年
关键词：
Gallium nitride (GaN); silicon carbide (SiC); field-reliability; material defects;
D O I：
10.1109/NAECON.2010.5712971
中图分类号：
V [航空、航天];
学科分类号：
08 ; 0825 ;
摘要：
Long-term field-reliability of gallium nitride (GaN) and silicon carbide (SiC) power switching devices is critically discussed in terms of bulk material defects. A new static reverse bias stress test circuit with a reactive load is proposed to delineate devices prone to field-failures.
引用
收藏
页码：322 / 327
页数：6
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