Wide bandgap semiconductor power devices

被引：11
|
作者：
Chow, TP [1 ]
Ramungul, N [1 ]
Ghezzo, M [1 ]
机构：
[1] Rensselaer Polytech Inst, Troy, NY 12180 USA
来源：
POWER SEMICONDUCTOR MATERIALS AND DEVICES | 1998年 / 483卷
关键词：
D O I：
10.1557/PROC-483-89
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The present status of high-voltage power semiconductor switching devices is reviewed. The choice and design of device structures are presented. The simulated performance of the key devices in 4H-SiC is described. The progress in high-voltage power device experimental demonstration is described. The material and process technology issues that need to be addressed for device commercialization are discussed.
引用
收藏
页码：89 / 102
页数：14
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