共 50 条
- [1] On the Power-Handling Capability of Wide Bandgap (WBG) Semiconductor Power Switching Devices [J]. GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 4, 2014, 64 (07): : 193 - 201
- [2] A REVIEW OF WBG POWER SEMICONDUCTOR DEVICES [J]. 2012 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2, 2012, 2 : 57 - 66
- [4] GaN-based Semiconductor Devices for Future Power Switching Systems [J]. 2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2016,
- [5] Semiconductor switching devices - Future trends [J]. DEFENCE SCIENCE JOURNAL, 1998, 48 (01) : 45 - 59
- [9] Power-switching applications beyond silicon: Status and future prospects of SiC and GaN devices [J]. MRS Bulletin, 2015, 40 : 399 - 405
- [10] PROSPECTS FOR THE CONTINUING DEVELOPMENT OF POWER SEMICONDUCTOR-DEVICES [J]. BROWN BOVERI REVIEW, 1984, 71 (05): : 222 - 227