Future Prospects of Widebandgap (WBG) Semiconductor Power Switching Devices

被引:83
|
作者
Shenai, Krishna [1 ]
机构
[1] LoPel Corp, Naperville, IL 60564 USA
关键词
Cost; high-frequency switching; junction temperature; manufacturing; material defects; packaging; thermal management; widebandgap (WBG); HIGH-VOLTAGE; SILICON; MOSFETS; RELIABILITY; GROWTH;
D O I
10.1109/TED.2014.2360641
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Electrical power switching devices based on widebandgap (WBG) semiconductors have the potential for transformative impact on a wide range of energy conversion applications. Significantly improved electrical and thermal conductivities of WBG semiconductors compared with the semiconductor silicon have the potential for more efficient, compact, and robust power conversion systems. However, to offset inherently higher manufacturing cost of WBG power devices and obtain system-level benefits, power converters need to be operated at higher semiconductor chip junction temperatures and/or at higher switching frequencies. This paper discusses the future prospects of WBG-based power electronics by considering the current state of the art of WBG chip manufacturing, packaging, and thermal management technologies.
引用
收藏
页码:248 / 257
页数:10
相关论文
共 50 条
  • [1] On the Power-Handling Capability of Wide Bandgap (WBG) Semiconductor Power Switching Devices
    Shenai, Krishna
    [J]. GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 4, 2014, 64 (07): : 193 - 201
  • [2] A REVIEW OF WBG POWER SEMICONDUCTOR DEVICES
    Millan, Jose
    [J]. 2012 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2, 2012, 2 : 57 - 66
  • [3] Current Status and Emerging Trends in Wide Bandgap (WBG) Semiconductor Power Switching Devices
    Shenai, Krishna
    Dudley, Michael
    Davis, Robert F.
    [J]. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2013, 2 (08) : N3055 - N3063
  • [4] GaN-based Semiconductor Devices for Future Power Switching Systems
    Ishida, Hidetoshi
    Kajitani, Ryo
    Kinoshita, Yusuke
    Umeda, Hidekazu
    Ujita, Shinji
    Ogawa, Masahiro
    Tanaka, Kenichiro
    Morita, Tatsuo
    Tamura, Satoshi
    Ishida, Masahiro
    Ueda, Tetsuzo
    [J]. 2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2016,
  • [5] Semiconductor switching devices - Future trends
    Ahmad, S
    [J]. DEFENCE SCIENCE JOURNAL, 1998, 48 (01) : 45 - 59
  • [6] Current state-of-the-art and future prospects for power semiconductor devices in power transmission and distribution applications
    Johnson, CM
    [J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 2003, 90 (11-12) : 667 - 693
  • [7] POWER SEMICONDUCTOR SWITCHING DEVICES - A COMPARISON BASED ON INDUCTIVE SWITCHING
    ADLER, MS
    WESTBROOK, SR
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) : 947 - 952
  • [8] Power-switching applications beyond silicon: Status and future prospects of SiC and GaN devices
    Dimitrijev, Sima
    Han, Jisheng
    Moghadam, Hamid Amini
    Aminbeidokhti, Amirhossein
    [J]. MRS BULLETIN, 2015, 40 (05) : 399 - 405
  • [9] Power-switching applications beyond silicon: Status and future prospects of SiC and GaN devices
    Sima Dimitrijev
    Jisheng Han
    Hamid Amini Moghadam
    Amirhossein Aminbeidokhti
    [J]. MRS Bulletin, 2015, 40 : 399 - 405
  • [10] PROSPECTS FOR THE CONTINUING DEVELOPMENT OF POWER SEMICONDUCTOR-DEVICES
    SITTIG, R
    RUEGG, A
    [J]. BROWN BOVERI REVIEW, 1984, 71 (05): : 222 - 227