GaN-based Semiconductor Devices for Future Power Switching Systems

被引：0

作者：

Ishida, Hidetoshi ^{[1
]}

Kajitani, Ryo ^{[1
]}

Kinoshita, Yusuke ^{[1
]}

Umeda, Hidekazu ^{[1
]}

Ujita, Shinji ^{[1
]}

Ogawa, Masahiro ^{[1
]}

Tanaka, Kenichiro ^{[1
]}

Morita, Tatsuo ^{[1
]}

Tamura, Satoshi ^{[1
]}

Ishida, Masahiro ^{[1
]}

Ueda, Tetsuzo ^{[1
]}

机构：

[1] Panasonic Corp, 3-1-1 Yagumo Nakamachi Moriguchi Shi, Osaka 5708501, Japan

来源：

2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2016年

关键词：

NATURAL SUPER JUNCTION;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaN-based natural superjunction diodes and Gate Injection Transistors (GITs) with p-type gate on AlGaN/GaN hetero structure are promising power devices with lower on state resistance and higher breakdown voltage for power switching applications. In this paper, the current status of the devices for integrated circuits and their application to power switching systems are reviewed, after explaining the basic technologies for decreasing on-resistance, increasing breakdown voltage, and suppressing current collapse. In addition, a solution to increase switching frequency of GITs for smaller system size is described. The effects of integrated circuit of DC/DC converter consisted of gate driver, high-side OTT and low-side OTT with short gate length are also examined.

引用

页数：4

共 50 条

[1] Vertical GaN-based power devices on bulk GaN substrates for future power switching systems
Shibata, Daisuke
Kajitani, Ryo
Handa, Hiroyuki
Shiozaki, Nanako
Ujita, Shinji
Ogawa, Masahiro
Tanaka, Kenichiro
Tamura, Satoshi
Hatsuda, Tsuguyasu
Ishida, Masahiro
Ueda, Tetsuzo
GALLIUM NITRIDE MATERIALS AND DEVICES XIII, 2018, 10532
[2] Status of GaN-based Power Switching Devices
Hikita, Masahiro
Ueno, Hiroaki
Matsuo, Hisayoshi
Ueda, Tetsuzo
Uemoto, Yasuhiro
Inoue, Kaoru
Tanaka, Tsuyoshi
Ueda, Daisuke
SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 1257 - 1262
[3] Recent Developments in GaN-based Optical Rapid Switching Semiconductor Devices
Mazumder, Sudip K.
Leach, Jacob
Udwary, Kevin
Wang, Xinmei
WIPDA 2015 3RD IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS, 2015, : 66 - 69
[4] AlGaN/GaN devices for future power switching systems
Ueda, D
Murata, T
Hikita, M
Nakazawa, S
Kuroda, M
Ishida, H
Yanagihara, M
Inoue, K
Ueda, T
Uemoto, Y
Tanaka, T
Egawa, T
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2005, TECHNICAL DIGEST, 2005, : 389 - 392
[5] Recent Advances and Future Prospects on GaN-based Power Devices
Ueda, Tetsuzo
2014 INTERNATIONAL POWER ELECTRONICS CONFERENCE (IPEC-HIROSHIMA 2014 - ECCE-ASIA), 2014, : 2075 - 2078
[6] GaN-based lateral and vertical power devices for high voltage switching applications
Mishra, Umesh
INTERNATIONAL EXHIBITION AND CONFERENCE FOR POWER ELECTRONICS, INTELLIGENT MOTION AND POWER QUALITY 2010 (PCIM EUROPE 2010), VOLS 1 AND 2, 2010, : 472 - 472
[7] GaN-Based RF power devices and amplifiers
Mishra, Umesh K.
Shen, Likun
Kazior, Thomas E.
Wu, Yi-Feng
PROCEEDINGS OF THE IEEE, 2008, 96 (02) : 287 - 305
[8] Advanced substrates for GaN-based power devices
Cibie, Anthony
Widiez, Julie
Escoffier, Rene
Blachier, Denis
Vladimirova, Kremena
Colonna, Jean-Philippe
Haumesser, Paul-Henri
Becu, Stephane
Coudrain, Perceval
Vandendaele, William
Biscarrat, Jerome
Gillot, Charlotte
Charles, Matthew
Di Cioccio, Lea
2019 IEEE 69TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC), 2019, : 168 - 174
[9] Renovation of Power Devices by GaN-based Materials
Ueda, Daisuke
2015 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2015,
[10] High power applications for GaN-based devices
Trew, RJ
Shin, MW
Gatto, V
SOLID-STATE ELECTRONICS, 1997, 41 (10) : 1561 - 1567

← 1 2 3 4 5 →