GaN-Based RF power devices and amplifiers

被引：1363
|
作者：
Mishra, Umesh K. [1 ]
Shen, Likun [1 ]
Kazior, Thomas E. [2 ]
Wu, Yi-Feng [3 ]
机构：
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[2] Raytheon RF Componenets, Andover, MA 01810 USA
[3] Santa Barbara Technol Ctr, CRR Inc, Goleta, CA 93117 USA
来源：
PROCEEDINGS OF THE IEEE | 2008年 / 96卷 / 02期
基金：
美国国家科学基金会;
关键词：
gallium nitride; high electron mobility Transistors (HEMTS); microwave transistors; millimeter wave transistors; MMICs; reliability;
D O I：
10.1109/JPROC.2007.911060
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The rapid development of the RF power electronics requires the introduction of wide bandgap material due to its potential in high Output power density, high operation voltage and high input impedance. GaN-based RF power devices have made substantial progresses in the last decade. This paper attempts to review the latest developments of the GaN HEMT technologies, including material growth, processing technologies, device epitaxial structures and MMIC designs, to achieve the state-of-the-art microwave and millimeter-wave performance. The reliability and manufacturing challenges are also discussed.
引用
收藏
页码：287 / 305
页数：19
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