Advanced GaN-based High Frequency Power Amplifiers

被引：0
|
作者：
Camarchia, V. [1 ]
Cipriani, E. [2 ]
Colantonio, P. [2 ]
Ghione, G. [1 ]
Giannini, F. [2 ]
Pirola, M. [1 ]
Quaglia, R. [1 ]
机构：
[1] Politecn Torino, Dipartimento Elettron & Telecomunicaz, Turin, Italy
[2] Univ Roma TorVergata, Dipartimento Ingegneria Elett, Rome, Italy
来源：
2013 IEEE WIRELESS POWER TRANSFER (WPT) | 2013年
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D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
In this paper we discuss the advantages offered by GaN HEMT technology in the design of narrow- and wideband high efficiency power amplifiers. On one side, we focus on the possibility of applying second harmonic tuning techniques without degradation of power performances, thanks to the GaN devices' high breakdown voltage. On the other hand, we discuss the impact of the high power density and consequent size reduction in GaN devices for the design of wideband power amplifiers. Three design examples are shown, to enforce the given considerations.
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页码：29 / 32
页数：4
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