14-W GaN-based microwave power amplifiers

被引：0

作者：

Wu, YF ^{[1
]}

Kapolnek, D ^{[1
]}

Ibbetson, J ^{[1
]}

Parikh, P ^{[1
]}

Keller, BP ^{[1
]}

Mishra, UK ^{[1
]}

机构：

[1] Nitres Inc, Goleta, CA 93117 USA

来源：

2000 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2000年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-power GaN-based flip-chip ICs are demonstrated using AlGaN/GaN High-Electron-Mobility-Transistors (HEMTs) as the active devices and AIN as the circuit substrates. The circuits achieved 6-10 GHz bandwidth, 9 dB linear gain and 14.1-W output power. This power level is the highest for a GaN-based amplifier to date, and is a factor of 4-7 higher than conventional GaAs-HEMT-based amplifiers using the same size of output devices.

引用

页码：963 / 965

页数：3

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