The influence of parasitic resistances on the fT-optimisation of high-speed SiGe-HBTs

被引：2
|
作者：
Agarwal, P [1 ]
Huizing, HGA [1 ]
Magnée, PHC [1 ]
机构：
[1] Philips Res Leuven, B-3001 Louvain, Belgium
来源：
ESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2003年
关键词：
D O I：
10.1109/ESSDERC.2003.1256871
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We study the influence of parasitic series resistances on the cut-off frequency of high-speed SiGe hetero-junction bipolar transistors. Due to coupling of the parasitic resistances with the internal collector-base capacitance significant extra delay time is introduced. This extra delay will cause saturation, or even a decrease, of f(T) at higher collector doping levels. In addition, we study the optimisation of an n-cap emitter profile, which is only possible when the collector delay is reduced to a minimum, and the series resistances are properly included.
引用
收藏
页码：291 / 294
页数：4
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