The influence of parasitic resistances on the fT-optimisation of high-speed SiGe-HBTs

被引：2
|
作者：
Agarwal, P [1 ]
Huizing, HGA [1 ]
Magnée, PHC [1 ]
机构：
[1] Philips Res Leuven, B-3001 Louvain, Belgium
来源：
ESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2003年
关键词：
D O I：
10.1109/ESSDERC.2003.1256871
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We study the influence of parasitic series resistances on the cut-off frequency of high-speed SiGe hetero-junction bipolar transistors. Due to coupling of the parasitic resistances with the internal collector-base capacitance significant extra delay time is introduced. This extra delay will cause saturation, or even a decrease, of f(T) at higher collector doping levels. In addition, we study the optimisation of an n-cap emitter profile, which is only possible when the collector delay is reduced to a minimum, and the series resistances are properly included.
引用
收藏
页码：291 / 294
页数：4
相关论文
共 50 条
  • [41] An investigation of the static and dynamic characteristics of high speed SiGe:C HBTs using a poly-SiGe emitter
    Martinet, B
    Romagna, F
    Kermarrec, O
    Campidelli, Y
    Saguin, F
    Baudry, H
    Marty, M
    Dutartre, D
    Chantre, A
    [J]. PROCEEDINGS OF THE 2002 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2002, : 147 - 150
  • [42] Modeling of U-Shaped and Plugged Emitter Resistance of High Speed SiGe HBTs
    Cheng, Peng
    Dahlstrom, Mattias
    Liu, Qizhi
    Gray, Peter
    Adkisson, James
    Zetterlund, Bjorn
    Pekarik, John
    Camillo-Castillo, Renata
    Radic, Ljubo
    Ellis-Monaghan, John
    Harame, David
    [J]. 2011 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM), 2011, : 154 - 157
  • [43] Design of BiCMOS SRAMs for high-speed SiGe applications
    Liu, Xuelian
    LeRoy, Mitchell R.
    Clarke, Ryan
    Chu, Michael
    Aquino, Hadrian O.
    Raman, Srikumar
    Zia, Aamir
    Kraft, Russell P.
    McDonald, John F.
    [J]. IET CIRCUITS DEVICES & SYSTEMS, 2014, 8 (06) : 487 - 498
  • [44] High-Speed SiGe BiCMOS Circuits for Optical Communication
    Torfs, Guy
    Moeneclaey, Bart
    Lambrecht, Joris
    Bruynsteen, Cedric
    Declerq, Jakob
    Niu, Shengpu
    Singh, Nishant
    Verbeke, Marijn
    Yin, Xin
    Ossieur, Peter
    Bauwelinck, Johan
    [J]. 2023 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM, BCICTS, 2023, : 153 - 158
  • [45] High-speed SiGe HBT track-and-hold
    Hoskins, MJ
    Williams, DR
    [J]. IMTC/O3: PROCEEDINGS OF THE 20TH IEEE INSTRUMENTATION AND MEASUREMENT TECHNOLOGY CONFERENCE, VOLS 1 AND 2, 2003, : 1448 - 1453
  • [46] High-speed InGaP/GaAs HBTs with an ultra-thin base
    Oka, T
    Ouchi, K
    Mochizuki, K
    Nakamura, T
    [J]. COMPOUND SEMICONDUCTORS 1998, 1999, (162): : 285 - 290
  • [47] SIC GROWTH AND ITS APPLICATION TO HIGH-SPEED SI-HBTS
    SUGII, T
    YAMAZAKI, T
    ARIMOTO, Y
    ITO, T
    FURUMURA, Y
    NAMURA, I
    GOTO, H
    TAHARA, A
    [J]. MICROELECTRONIC ENGINEERING, 1992, 19 (1-4) : 335 - 342
  • [48] GAINP/GAAS HBTS FOR HIGH-SPEED INTEGRATED-CIRCUIT APPLICATIONS
    HO, WJ
    CHANG, MF
    SAILER, A
    ZAMPARDI, P
    DEAKIN, D
    MCDERMOTT, B
    PIERSON, R
    HIGGINS, JA
    WALDROP, J
    [J]. IEEE ELECTRON DEVICE LETTERS, 1993, 14 (12) : 572 - 574
  • [49] SPEED CONTROL OF HIGH-SPEED 1800 FT-MIN ELEVATOR
    INUZUKA, I
    MIYAO, H
    HAYASE, S
    SHIMA, S
    [J]. IEEE TRANSACTIONS ON POWER APPARATUS AND SYSTEMS, 1975, 94 (04): : 1097 - 1097
  • [50] HIGH-SPEED INP/INGAAS HBTS OPERATED AT SUBMILLIAMPERE COLLECTOR CURRENTS
    NAKAJIMA, H
    KURISHIMA, K
    YAMAHATA, S
    KOBAYASHI, T
    MATSUOKA, Y
    [J]. ELECTRONICS LETTERS, 1993, 29 (21) : 1887 - 1888
12345