A Novel Ccb and Rb Reduction Technique for High-Speed SiGe HBTs

被引：0

作者：

Cheng, Peng ^{[1
]}

Liu, Qizhi ^{[1
]}

Camillo-Castillo, Renata ^{[1
]}

Liedy, Bob ^{[1
]}

Adkisson, James ^{[1
]}

Pekarik, John ^{[1
]}

Gray, Peter ^{[1
]}

Kaszuba, Philip ^{[1
]}

Moszkowicz, Leon ^{[1
]}

Zetterlund, Bjorn ^{[1
]}

Macha, Keith ^{[1
]}

Tallman, Kurt ^{[1
]}

Khater, Marwan ^{[2
]}

Harame, David ^{[1
]}

机构：

[1] IBM Microelect Div, 1000 River Rd, Essex Jct, VT USA

[2] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

2012 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM) | 2012年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this paper, we discuss a novel technique to reduce base resistance (R-b) and collector-base capacitance (C-cb) for higher F-max in high-speed SiGe HBTs. In order to reduce C-cb, we first located the origins of the different components of C-cb through AC extraction. Then we utilized scanning capacitance measurements (SCM) to examine the shape of the collector-base depletion. We then propose a method to reduce the extrinsic C-cb, namely by using reticle enhancement techniques to print a blocking oxide layer to inhibit boron outdiffusion. An additional benefit was the reduction of R-b by reducing the base link resistance.

引用

页数：4

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