High-k ZrO2 gate dielectric on strained-Si

被引：0

作者：

Bhattacharya, S ^{[1
]}

Samanta, SK ^{[1
]}

Chatterjee, S ^{[1
]}

McCarthy, J ^{[1
]}

Armstrong, BM ^{[1
]}

Gamble, HS ^{[1
]}

Maiti, CK ^{[1
]}

Perova, T ^{[1
]}

Moore, A ^{[1
]}

机构：

[1] Queens Univ Belfast, Sch Elect & Elect Engn, Belfast BT7 1NN, Antrim, North Ireland

来源：

FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES | 2004年 / 786卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The growth and structural characterization of UHV-compatible LPCVD grown strained-Si layer on linearly graded relaxed SiGe layer and the electrical properties of the high-k ultrathin ZrO2 films deposited on strained-Si layer using microwave-plasma CVD at low temperature (150degreesC) are reported. The strained-Si layer has been characterized using AFM, TEM and Raman spectroscopy. The C-V and G-V characteristics of ZrO2 films have been used to calculate the interface trap density, D-it, near the midgap energy, and the fixed oxide charge density, Q(f)/q. These are found to be 2.24 x 10(12) cm(-2) eV(-1) and 1.45 x 10(11) cm(-2), respectively. Poole-Frenkel (P-F) conduction mechanism is found to dominate the current conduction at room temperature.

引用

页码：159 / 164

页数：6

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