ZrO2 as a high-κ dielectric for strained SiGe MOS devices

被引：4
|
作者：
Mahapatra, R
Kar, GS
Samantaray, CB
Dhar, A
Bhattacharya, D
Ray, SK [1 ]
机构：
[1] Indian Inst Technol, Dept Phys & Meteorol, Kharagpur 721302, W Bengal, India
[2] Indian Inst Technol, Ctr Mat Sci, Kharagpur 721302, W Bengal, India
来源：
BULLETIN OF MATERIALS SCIENCE | 2002年 / 25卷 / 06期
关键词：
ZrO2; high-kappa dielectric; SiGe MOS devices;
D O I：
10.1007/BF02710526
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The potential of ZrO2 thin film as a high-kappa gate dielectric for scaled MOSFET devices has been studied. ZrO2 has been deposited directly on a Si0.8Ge0.2 substrate by reactive RF magnetron sputtering. An equivalent oxide thickness of < 20 Angstrom with a leakage current of the order of 10(-4) A/cm(2) at 1 V has been obtained. Well-behaved capacitance-voltage characteristics with an interface state density of 2 x 10(11) cm(-2) eV(-1) have been achieved. The deposited dielectric exhibits low charge trapping under constant current stressing.
引用
收藏
页码：455 / 457
页数：3
相关论文
共 50 条
  • [1] ZrO2 as a high-K dielectric for strained SiGe MOS devices
    R. Mahapatra
    G. S. Kar
    C. B. Samantaray
    A. Dhar
    D. Bhattacharya
    S. K. Ray
    [J]. Bulletin of Materials Science, 2002, 25 : 455 - 457
  • [2] MOS devices with tetragonal ZrO2 as gate dielectric formed by annealing ZrO2/Ge/ZrO2 laminate
    Wu, Yung-Hsien
    Chen, Lun-Lun
    Chen, Wei-Chia
    Lin, Chia-Chun
    Wu, Min-Lin
    Wu, Jia-Rong
    [J]. MICROELECTRONIC ENGINEERING, 2011, 88 (07) : 1361 - 1364
  • [3] Tetragonal ZrO2/Al2O3 Stack as High-κ Gate Dielectric for Si-Based MOS Devices
    Wu, Yung-Hsien
    Chen, Lun-Lun
    Lyu, Rong-Jhe
    Li, Ming-Yen
    Wu, Hsiao-Che
    [J]. IEEE ELECTRON DEVICE LETTERS, 2010, 31 (09) : 1014 - 1016
  • [4] MOS Devices With High-κ (ZrO2)x(La2O3)1-x Alloy as Gate Dielectric Formed by Depositing ZrO2/La2O3/ZrO2 Laminate and Annealing
    Wu, Yung-Hsien
    Chen, Lun-Lun
    Lyu, Rong-Jhe
    Wu, Jia-Rong
    Wu, Min-Lin
    Lin, Chia-Chun
    [J]. IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2012, 11 (03) : 483 - 491
  • [5] Electrical properties of ZrO2 gate dielectric on SiGe
    Ngai, T
    Qi, WJ
    Sharma, R
    Fretwell, J
    Chen, X
    Lee, JC
    Banerjee, S
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (04) : 502 - 504
  • [6] Electrical properties of stacked gate dielectric (SiO2/ZrO2) deposited on strained SiGe layers
    Chatterjee, S
    Samanta, SK
    Banerjee, HD
    Maiti, CK
    [J]. THIN SOLID FILMS, 2002, 422 (1-2) : 33 - 38
  • [7] High-k ZrO2 gate dielectric on strained-Si
    Bhattacharya, S
    Samanta, SK
    Chatterjee, S
    McCarthy, J
    Armstrong, BM
    Gamble, HS
    Maiti, CK
    Perova, T
    Moore, A
    [J]. FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES, 2004, 786 : 159 - 164
  • [8] Deposition of high-k ZrO2 films on strained SiGe layers using microwave plasma
    Chatterjee, S
    Samanta, SK
    Banerjee, HD
    Maiti, CK
    [J]. ELECTRONICS LETTERS, 2001, 37 (06) : 390 - 392
  • [9] Structure and dielectric properties of amorphous high-κ oxides: HfO2, ZrO2, and their alloys
    Wang, Yin
    Zahid, Ferdows
    Wang, Jian
    Guo, Hong
    [J]. PHYSICAL REVIEW B, 2012, 85 (22):
  • [10] Hf1-xZrxO2/ZrO2 Nanolaminate Thin Films as a High-κ Dielectric
    Kashir, Alireza
    Farahani, Mehrdad Ghiasabadi
    Kamba, Stanislav
    Yadav, Manoj
    Hwang, Hyunsang
    [J]. ACS APPLIED ELECTRONIC MATERIALS, 2021, 3 (12) : 5632 - 5640
12345