High-k ZrO2 gate dielectric on strained-Si

被引：0
|
作者：
Bhattacharya, S [1 ]
Samanta, SK [1 ]
Chatterjee, S [1 ]
McCarthy, J [1 ]
Armstrong, BM [1 ]
Gamble, HS [1 ]
Maiti, CK [1 ]
Perova, T [1 ]
Moore, A [1 ]
机构：
[1] Queens Univ Belfast, Sch Elect & Elect Engn, Belfast BT7 1NN, Antrim, North Ireland
来源：
FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES | 2004年 / 786卷
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The growth and structural characterization of UHV-compatible LPCVD grown strained-Si layer on linearly graded relaxed SiGe layer and the electrical properties of the high-k ultrathin ZrO2 films deposited on strained-Si layer using microwave-plasma CVD at low temperature (150degreesC) are reported. The strained-Si layer has been characterized using AFM, TEM and Raman spectroscopy. The C-V and G-V characteristics of ZrO2 films have been used to calculate the interface trap density, D-it, near the midgap energy, and the fixed oxide charge density, Q(f)/q. These are found to be 2.24 x 10(12) cm(-2) eV(-1) and 1.45 x 10(11) cm(-2), respectively. Poole-Frenkel (P-F) conduction mechanism is found to dominate the current conduction at room temperature.
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页码：159 / 164
页数：6
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